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| Ordering number : ENN7758 MCH6732 MCH6732 Features * * NPN Epitaxial Planar Silicon Transistor Schottky Barrier Diode DC / DC Converter Applications Composite type with a NPN transistor and a Schottky barrier diode contained in one package facilitatiing high-density mounting. Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm). Specifications Absolute Maximum Ratings at Ta=25C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 0.5 2 --55 to +125 --55 to +125 V V A A C C VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) 20 15 5 1 2 0.7 150 --55 to +125 V V V A A W C C Symbol Conditions Ratings Unit Marking : PG Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 63004 TS IM TA-100823 No.7758-1/5 MCH6732 Electrical Characteristics at Ta=25C Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time [Di] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF IR C trr IR=0.5mA IF=0.5A VR=6V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 12 0.40 13 10 0.45 90 V V A pF ns ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCB=12V, IE=0 VEB=4V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=50mA VCB=10V, f=1MHz IC=400mA, IB=20mA IC=400mA, IB=20mA IC=10A, IE=0 IC=1mA, RBE= IE=10A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 20 15 5 30 165 25 300 440 4 140 0.9 280 1.2 0.1 0.1 800 MHz pF mV V V V V ns ns ns A A Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm 2232 0.25 Electrical Connection 6 0.3 4 2.1 1.6 5 4 0.15 5 6 1 : Emitter 2 : Base 3 : Cathode 4 : Anode 5 : NC 6 : Collector Top view 0.25 32 0.65 2.0 0.07 1 6 5 4 (Bottom view) 0.85 1 : Emitter 2 : Base 3 : Cathode 4 : Anode 5 : NC 6 : Collector SANYO : MCPH6 1 2 3 1 2 3 (Top view) Switching Time Test Circuit [TR] IB1 OUTPUT IB2 VR 50 + 220F VBE= --5V + 470F VCC=5V RB trr Specified Circuit [Di] Duty10% 100mA 100mA INPUT 50 RL 10s 100 10 --5V trr IC=20IB1= --20IB2=400mA No.7758-2/5 10mA PW=20s D.C.1% MCH6732 1000 IC -- VCE 2 30.0 0.0mA mA 10 .0m A [TR] A 7.0m 5.0mA 1200 IC -- VBE [TR] VCE=2V 900 Collector Current, IC -- mA 700 600 500 400 300 200 100 0 0 3.0mA 2.0mA 1.5mA Collector Current, IC -- mA 800 1000 800 600 400 0.6mA 0.3mA IB=0 100 200 300 400 500 600 700 800 900 1000 200 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT05038 Collector-to-Emitter Voltage, VCE -- mV 1000 IT05037 hFE -- IC Base-to-Emitter Voltage, VBE -- V 1000 7 [TR] VCE=2V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV VCE(sat) -- IC Ta=7 5 1.0mA C 25C --25C [TR] IC / IB=20 7 Ta=75C 5 3 2 100 7 5 3 2 DC Current Gain, hFE 5 25C --25C 3 C 75 a= 25C T -- 2 25 10 7 5 C 100 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05039 3 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 1000 7 Collector Current, IC -- mA 3 5 7 1000 IT05042 VCE(sat) -- IC [TR] IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V VBE(sat) -- IC [TR] IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 2 100 7 5 3 2 1.0 Ta= --25C 7 = Ta 7 C 5 C 5 --2 25C 5 75C C 25 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05043 10 1.0 3 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 10 Collector Current, IC -- mA 1000 5 7 1000 IT05044 Cob -- VCB [TR] f=1MHz Gain-Bandwidth Product, fT -- MHz fT -- IC [TR] VCE=2V Output Capacitance, Cob -- pF 7 7 5 5 3 3 2 2 100 7 1.0 1.0 1.0 2 3 5 7 10 2 3 2 3 5 7 10 2 3 5 7 100 2 3 Collector-to-Base Voltage, VCB -- V IT05041 Collector Current, IC -- mA 5 7 1000 IT05040 No.7758-3/5 MCH6732 10 7 5 Ron -- IB f=1MHz IN 1k 1k [TR] 3 ASO ICP=2A IC=1A 10 [TR] 10s OUT 2 1.0 1m s 0 s 10 00 5 s ON--Resistance, Ron -- Collector Current, IC -- A 3 2 IB 7 5 3 2 0.1 7 5 3 10 ms s DC 0m op 1.0 7 5 3 2 era tio n 2 0.01 0.1 0.1 0.1 Ta=25C Single pulse Mounted on a ceramic board (600mm2!0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 2 3 5 7 1.0 2 3 5 Base Current, IB -- mA 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 10 IT06664 7 PC -- Ta Collector-to-Emitter Voltage, VCE -- V IT07193 [TR] Collector Dissipation, PC -- mW M ou nt ed on ac er am ic bo ar d (6 00 m m2 ! 0. 8m m ) 140 160 Ambient Temperature, Ta -- C 1.0 7 5 IT05047 IF -- VF [SBD] 10000 7 5 3 2 IR -- VR Ta=125C [SBD] 100C 75C Reverse Current, IR -- A Forward Current, IF -- A 3 2 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0 5 0.1 7 5 3 2 50C 25C 0.01 0 0.1 0.2 0.3 0.4 0.5 IT06886 Ta= 125 C 100 C 75 C 50C 25C 10 15 IT06887 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 180 360 360 PF(AV) -- IO (1) Reverse Voltage, VR -- V 7 5 [SBD] C -- VR [SBD] f=1MHz Rectangular wave (2) (4) (3) Interterminal Capacitance, C -- pF 1.4 IT06888 Sine wave 3 2 (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 0.6 0.8 1.0 1.2 10 7 5 1.0 2 3 5 7 10 2 3 Average Forward Current, IO -- A Reverse Voltage, VR -- V IT06889 No.7758-4/5 MCH6732 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2004. Specifications and information herein are subject to change without notice. PS No.7758-5/5 |
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